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Электронный компонент: ST-309

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- 1-
S T - 3 0 9
Photo transistors
K O D E N S H I
*2. I
CEL
of PTr1 *3. Setup Iuminous intensity by standard devices.
The ST-309 is a doble type high-sensitivity Silicon
phototransistor. This phototransistor is compact size
F E A T U R E S
Side-viwering plastic package
Bult-in 2ch phototransistors
A P P L I C A T I O N S
Optical mouses
E n c o d e r s
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
C-E voltage
E-C voltage
Collector current
Collector power dissipation
Operating temp.
Storage Temp.
Soldering temp.
* 1
V
C E O
V
E C O
I
C
P
C
T o p r .
T s t g .
T s o l .
3 0
4
3 0
-
- 2 5 ~ + 8 5
- 3 0 ~ + 1 0 0
2 6 0
V
V
m A
m W


U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
V
C E O
= 1 0 V
V
C E
=5V, E
V
* 2
V
C C
=10V, I
C
= 5 m A ,
R
L
= 1 0 0
1 0 %
I t e m
T y p .
8
9
4 0 01 1 0 0
8 0 0
6 0
Collecor dark current
Light current
Light current ratio
Switching speeds
Rise time
Fall time
Spectral sensitivity
Peak wavelength
Half angle
I
C E O
I
C E L 1
I
C E L 2
/ I
C E L 1
t r
t f
p
4 0
0 . 8
0 . 5
1 1 5
1 . 2
A
A
s e c .
s e c .
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. For MAX.5 seconds at the position of 2 mm from the package
- 2-
S T - 3 0 9
Photo transistors
Collector current Vs.
Collector - Emitter voltage
Collector current Vs.
Illuminance
Dark current Vs.
Ambient temperature
Relative sensitivity Vs.
Wavelength
Swithing time vs.
Load resistance
Radiant Pattern
Collector power dissipation Vs.
Ambient temperature